MCP87018

DS22329A-page 2

 2013 Microchip Technology Inc.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

† Notice:

Stresses above those listed under

“Maximum Ratings” may cause permanent damage to

the device. This is a stress rating only and functional

operation of the device at those or any other conditions

above those indicated in the operational sections of this

specification is not intended. Exposure to maximum

rating conditions for extended periods may affect

device reliability.

DC ELECTRICAL CHARACTERISTICS

Electrical Characteristics:

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Static Characteristics

Drain-to-Source

Breakdown Voltage

25

—

—

V

Drain-to-Source Leakage Current

——

1

µA

Gate-to-Source Leakage Current

—

—

100

nA

Gate-to-Source Threshold Voltage

11.3

1.6

V

Drain-to-Source On Resistance

—2.2

—

—1.8

2.2

m



—1.5

1.9

m



Transconductance

—

162

—

S

Dynamic Characteristics

Input Capacitance

—

2925

—

pF

Output Capacitance

—

1305

—

pF

Reverse Transfer Capacitance

—

330

—

pF

Total Gate Charge

—32.5

37

nC

Gate-to-Drain Charge

—13

—

nC

Gate-to-Source Charge

—5.3

—

nC

—3.8

—

nC

Output Charge

—26

—

nC

Turn-On Delay Time

—6.53

—

ns

Rise Time

—28.3

—

ns

Turn-Off Delay Time

—26.35

—

ns

Fall Time

—28.05

—

ns

Series Gate Resistance

—1.5

—

