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STM32F050C4 데이터시트(PDF) 73 Page - STMicroelectronics

부품명 STM32F050C4
상세설명  Low- and medium-density advanced ARM-based 32-bit MCU with up to 32 Kbytes Flash, timers, ADC and comm. interfaces
PDF  97 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STM32F050xx
Electrical characteristics
Doc ID 023683 Rev 1
73/97
Equation 1: RAIN max formula
The formula above (Equation 1) is used to determine the maximum external impedance
allowed for an error below 1/4 of LSB. Here N = 12 (from 12-bit resolution).
Table 50.
RAIN max for fADC = 14 MHz
(1)
1.
Guaranteed by design, not tested in production.
Ts (cycles)
tS (µs)
RAIN max (kΩ)
1.5
0.11
0.4
7.5
0.54
5.9
13.5
0.96
11.4
28.5
2.04
25.2
41.5
2.96
37.2
55.5
3.96
50
71.5
5.11
NA
239.5
17.1
NA
Table 51.
ADC accuracy(1)(2) (3)
1.
ADC DC accuracy values are measured after internal calibration.
Symbol
Parameter
Test conditions
Typ
Max(4)
Unit
ET
Total unadjusted error
fPCLK = 48 MHz,
fADC = 14 MHz, RAIN < 10 kΩ,
VDDA = 3 V to 3.6 V
TA = 25 °C
±1.3
±2
LSB
EO
Offset error
±1
±1.5
EG
Gain error
±0.5
±1.5
ED
Differential linearity error
±0.7
±1
EL
Integral linearity error
±0.8
±1.5
ET
Total unadjusted error
fPCLK = 48 MHz,
fADC = 14 MHz, RAIN < 10 kΩ,
VDDA = 2.7 V to 3.6 V
TA =
−40 to 105 °C
±3.3
±4
LSB
EO
Offset error
±1.9
±2.8
EG
Gain error
±2.8
±3
ED
Differential linearity error
±0.7
±1.3
EL
Integral linearity error
±1.2
±1.7
ET
Total unadjusted error
fPCLK = 48 MHz,
fADC = 14 MHz, RAIN < 10 kΩ,
VDDA = 2.4 V to 3.6 V
TA = 25 °C
±3.3
±4
LSB
EO
Offset error
±1.9
±2.8
EG
Gain error
±2.8
±3
ED
Differential linearity error
±0.7
±1.3
EL
Integral linearity error
±1.2
±1.7
R
AIN
T
S
f
ADC
C
ADC
2
N2
+
()
ln
×
×
----------------------------------------------------------------
R
ADC
–
<



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