STP13N95K3 datasheet(3/19 Pages) STMICROELECTRONICS

3 / 19 page

STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3

Electrical ratings

Doc ID15685 Rev 3

3/19

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-247

TO-220FP

I2PAKFP

VDS

Drain source voltage

950

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

10 (1)

Limited by maximum junction temperature.

Drain current (continuous) at TC = 100 °C

6 (1)

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

40 (1)

PTOT

Total dissipation at TC = 25 °C

190

IAR

Max current during repetitive or single

pulse avalanche (pulse width limited by

Tjmax )

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID=IAS, VDD= 50 V)

400

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

dv/dt (3)

ISD ≤ 10 A, di/dt ≤ 400 A/µs, VPeak ≤V(BR)DSS.

Peak diode recovery voltage slope

V/ns

Tstg

Operating junction temperature

Storage temperature

- 55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

TO-247

TO-220FP

I2PAKFP

Rthj-case

Thermal resistance junction-case max

0.66

3.13

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

°C/W

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