STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3

Electrical characteristics

Doc ID15685 Rev 3

5/19

The built-in-back Zener diodes have specifically been designed to enhance not only the

device’s ESD capability, but also to make them safely absorb possible voltage transients that

may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

Rise time

Turn-off delay time

Fall time

(see Figure 22)

-

18

16

50

21

-

ns

ns

ns

ns

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

Source-drain current (pulsed)

-

10

40

mA

A

(1)

1.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

-

1.6

V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

di/dt = 100 A/µs,

(see Figure 21)

-

500

9

36

ns

µC

A

Reverse recovery time

Reverse recovery charge

Reverse recovery current

di/dt=100 A/µs,

Tj=150 °C

(see

Figure 21)

-

624

11

37

ns

µC

A

Table 8.

Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Gate-source breakdown voltage Igs ± 1mA, (open drain)

30

-

V