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STP52N25M5 데이터시트(PDF) 1 Page - STMicroelectronics |
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STP52N25M5 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() July 2010 Doc ID 17776 Rev 1 1/12 12 STP52N25M5 N-channel 250 V, 0.055 Ω, 28 A, TO-220 MDmeshTM V Power MOSFET Features ■ Amongst the best RDS(on)* area ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested Application ■ Switching applications Description This devices is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID STP52N25M5 250 V < 0.065 Ω 28 A TO-220 1 2 3 Table 1. Device summary Order code Marking Package Packaging STP52N25M5 52N25M5 TO-220 Tube www.st.com |
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