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STP52N25M5 데이터시트(PDF) 5 Page - STMicroelectronics

부품명 STP52N25M5
상세설명  N-channel 250 V, 0.055 廓, 28 A, TO-220 MDmeshTM V Power MOSFET
PDF  12 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP52N25M5 데이터시트(HTML) 5 Page - STMicroelectronics

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STP52N25M5
Electrical characteristics
Doc ID 17776 Rev 1
5/12
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
td(V)
tr(V)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
VDD = 125 V, ID = 14 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 13)
-
40
18
64
82
-
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current (pulsed)
-
28
112
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 28 A, VGS = 0
-
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 28 A, di/dt = 100 A/µs
VDD= 60 V, TJ = 25 °C
(see Figure 15)
-
168
1.2
14.5
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 28 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 15)
-
196
1.7
17
ns
µC
A



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