| 전자부품 데이터시트 검색엔진 |
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M51995AFP 데이터시트(PDF) 34 Page - Renesas Technology Corp |
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M51995AFP 데이터시트(HTML) 34 Page - Renesas Technology Corp |
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34 / 43 page ![]() M51995AP/AFP REJ03D0835-0300 Rev.3.00 Jun 06, 2008 Page 32 of 40 Current Limiting Circuit 1. Peripheral circuit of CLM +, CLM− terminal + + R1 VCC Collector CVCC VOUT CLM+ Emitter GND M51995A RNF1 RNF2 CNF RCLM CFIN Input smoothing capacitor Figure 29 Peripheral Circuit Diagram of CLM + Terminal + + R1 VCC Collector CVCC VOUT CLM − Emitter GND M51995A RNF1 RNF2 CNF RCLM CFIN Input smoothing capacitor Figure 30 Peripheral Circuit Diagram of CLM − Terminal Figure 29 and 30 show the example circuit diagrams around the CLM + and CLM− terminal. It is required to connect the low pass filter, as the main current or drain current contains the spike current especially during the turn- on duration of MOS FET. 1,000 pF to 22,000 pF is recommended for CNF and the RNF1 and RNF2 have the functions both to adjust the “current- detecting-sensitivity” and to consist the low pass filter. To design the RNF1 and RNF2, it is required to consider the influence of CLM terminal source current (IINCLM+ or INFCLM−), which value is in the range of 90 to 270 µA. In order to be not influenced from these resistor paralleled value of RNF1 and RNF2, (RNF1/RNF2) is recommended to be less than 100 Ω. The RCLM should be the non-inductive resistor. |
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