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STM32F030R8 데이터시트(PDF) 47 Page - STMicroelectronics |
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STM32F030R8 데이터시트(HTML) 47 Page - STMicroelectronics |
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47 / 88 page ![]() DocID024849 Rev 1 47/88 STM32F030x4 STM32F030x6 STM32F030x8 Electrical characteristics 73 6.3.6 Wakeup time from low-power mode The wakeup times given in Table 28 is measured on a wakeup phase with a 8-MHz HSI RC oscillator. The event used to wake up the device depends from the current operating mode: Stop or sleep mode: the wakeup event is WFE. The wakeup pin used in stop and sleep mode is PA0 and in standby mode is PA1. All timings are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 18: General operating conditions. Table 27. Switching output I/O current consumption Symbol Parameter Conditions(1) 1. CS = 7 pF (estimated value) I/O toggling frequency (fSW) Typ Unit ISW I/O current consumption VDD = 3.3 V CEXT = 0 pF C = CINT + CEXT+ CS 4 MHz 0.18 mA 8 MHz 0.37 16 MHz 0.76 24 MHz 1.39 48 MHz 2.188 VDD = 3.3 V CEXT = 22 pF C = CINT + CEXT+ CS 4 MHz 0.49 8 MHz 0.94 16 MHz 2.38 24 MHz 3.99 VDD = 3.3 V CEXT = 47 pF C = CINT + CEXT+ CS C = Cint 4 MHz 0.81 8 MHz 1.7 16 MHz 3.67 Table 28. Low-power mode wakeup timings Symbol Parameter Conditions Typ @VDD = 3.3 V Max Unit tWUSTOP Wakeup from Stop mode Regulator in run mode 4.2 5 µs tWUSTANDBY Wakeup from Standby mode 50.96 - tWUSLEEP Wakeup from Sleep mode 1.1 - |
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