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2STP535FP 데이터시트(PDF) 3 Page - STMicroelectronics |
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2STP535FP 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() 2STP535FP Electrical characteristics Doc ID 16132 Rev 1 3/8 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICEO Collector cut-off current (IB = 0) VCE = 180 V 50 µA ICBO Collector-base cut-off current (IE = 0) VCB = 180 V 50 µA IEBO Emitter-base cut-off current (IC = 0) VEB = 5 V 100 µA VCEO(sus) (1) 1. Pulse test: pulse duration ≤300 µs, duty cycle ≤2 %. Collector-emitter sustaining voltage (IB = 0) IC = 30 mA 180 V VCE(sat) (1) Collector-emitter saturation voltage IC = 3 A IB = 6 mA IC = 8 A IB = 80 mA 2 2.5 V V VBE(on) (1) Base-emitter (on) voltage IC = 8 A VCE = 4 V 2.8 V hFE (1) DC current gain IC = 3 A VCE = 4 V IC = 8 A VCE = 4 V 1000 200 20000 VF (1) Diode forward voltage IF = 10 A 2.8 V |
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