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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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M68HC08 데이터시트(PDF) 63 Page - Freescale Semiconductor, Inc |
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M68HC08 데이터시트(HTML) 63 Page - Freescale Semiconductor, Inc |
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63 / 332 page  FLASH Memory MC68HC908JB16 — Rev. 1.1 Technical Data Freescale Semiconductor FLASH Memory 63 4.6 FLASH Mass Erase Operation Use the following procedure to erase the entire FLASH memory: 1. Set both the ERASE bit and the MASS bit in the FLASH control register. 2. Write any data to any FLASH address within the address range $FFD0–$FFFF. 3. Wait for a time, tnvs (5µs). 4. Set the HVEN bit. 5. Wait for a time tMErase (200ms). 6. Clear the ERASE bit. 7. Wait for a time, tnvhl (100µs). 8. Clear the HVEN bit. 9. After time, trcv (1µs), the memory can be accessed in read mode again. NOTE: Programming and erasing of FLASH locations cannot be performed by executing code from the FLASH memory; the code must be executed from RAM. While these operations must be performed in the order as shown, but other unrelated operations may occur between the steps. |
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