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STM8S005K6 데이터시트(PDF) 70 Page - STMicroelectronics |
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STM8S005K6 데이터시트(HTML) 70 Page - STMicroelectronics |
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70 / 103 page ![]() Table 33: LSI oscillator characteristics Unit Max Typ Min Parameter Symbol kHz 128 Frequency fLSI µs 7 (1) LSI oscillator wakeup time tsu(LSI) µA 5 LSI oscillator power consumption IDD(LSI) (1) Guaranteeed by design, not tested in production. Figure 20: Typical LSI frequency variation vs VDD @ 3 temperatures IID10242 100 105 110 115 120 125 130 135 140 145 150 2.5 3 3.5 4 4.5 5 5.5 6 VDD [V] -40°C 25°C 85°C Memory characteristics 9.3.5 RAM and hardware registers Table 34: RAM and hardware registers Unit Min Conditions Parameter Symbol V VIT-max (2) Halt mode (or reset) Data retention mode (1) VRM (1) Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware registers (only in halt mode). Guaranteed by design, not tested in production. refer to Operating conditions for the value of VIT-max (2)Refer to the Operating conditions section for the value of V IT-max Flash program memory/data EEPROM memory General conditions: TA = -40 to 85°C. DocID022186 Rev 3 70/103 STM8S005K6 STM8S005C6 Electrical characteristics |
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