RJK4002DPP-M0 datasheet(1/7 Pages) RENESAS

부품명	RJK4002DPP-M0

상세설명	400V - 3A - MOS FET High Speed Power Switching

PDF	7 Pages

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제조업체	RENESAS [Renesas Technology Corp]

홈페이지	http://www.renesas.com

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R07DS0551EJ0200 Rev.2.00

Page 1 of 6

Aug 03, 2012

Preliminary Datasheet

RJK4002DPP-M0

400V - 3A - MOS FET

High Speed Power Switching

Features

 Low on-state resistance

RDS(on) = 2.4  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)

 High speed switching

Outline

RENESAS Package code: PRSS0003AF-A

(Package name: TO-220FL)

1

2

3

D

S

G

1. Gate

2. Drain

3. Source

Absolute Maximum Ratings

(Ta = 25

C)

Item

Symbol

Value

Unit

Drain to source voltage

VDSS

400

V

Gate to source voltage

VGSS

30

V

Drain current

ID

Note4

3

A

Drain peak current

ID(pulse)

Note1

6

A

Body-drain diode reverse drain current

IDR

3

A



Body-drain diode reverse drain peak current

IDR(pulse)

Note1

6

A



Avalanche current

IAP

Note3

2.5

A

Avalanche energy

EAR

Note3

0.357

mJ



Channel dissipation

Pch

Note 2

20

W

Channel to case thermal Impedance

ch-c

6.25

C/W

Channel temperature

Tch

150

C

Storage temperature

Tstg

–55 to +150

C

Notes: 1. PW

 10 ms, duty cycle  1 %

2. Value at Tc = 25

C

3. STch = 25

C, Tch  150C

4. Pulse width limited by safe operating area.

R07DS0551EJ0200

Rev.2.00

Aug 03, 2012

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