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RJK4002DPP-M0 데이터시트(PDF) 2 Page - Renesas Technology Corp |
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RJK4002DPP-M0 데이터시트(HTML) 2 Page - Renesas Technology Corp |
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2 / 7 page ![]() RJK4002DPP-M0 Preliminary R07DS0551EJ0200 Rev.2.00 Page 2 of 6 Aug 03, 2012 Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 400 — — V ID = 10 mA, VGS = 0 Zero gate voltage drain current IDSS — — 1 A VDS = 400 V, VGS = 0 Gate to source leak current IGSS — — 0.1 A VGS = 30 V, VDS = 0 Gate to source cutoff voltage VGS(off) 3.5 — 4.5 V VDS = 10 V, ID = 1 mA Static drain to source on state resistance RDS(on) — 2.4 2.9 ID = 1.5 A, VGS = 10 V Note 5 Input capacitance Ciss — 165 — pF Output capacitance Coss — 25 — pF Reverse transfer capacitance Crss — 2.6 — pF VDS = 25 V VGS = 0 f = 1 MHz Turn-on delay time td(on) — 11 — ns Rise time tr — 12 — ns Turn-off delay time td(off) — 23 — ns Fall time tf — 20 — ns ID = 1.5 A VGS = 10 V RL = 133 Rg = 10 Total gate charge Qg — 6.0 — nC Gate to source charge Qgs — 1.2 — nC Gate to drain charge Qgd — 3.4 — nC VDD = 320 V VDS = 100 V ID = 3 A Body-drain diode forward voltage VDF — 0.9 1.5 V IF = 3 A, VGS = 0 Note 5 Body-drain diode reverse recovery time trr — 200 — ns IF = 3 A, VGS = 0 VDD = 320 V diF/dt = 100 A/s Note: 5. Pulse test |
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