DSEC29-06AC

ns

5

A

T

reverse recovery time

A

7

35

95

ns

I

RM

max. reverse recovery current

15

25

T= 100°C

VJ

=A/µs

200

/dt

t

rr

300

25

T= 100°C

VJ

0.1

mJ

I

L =

µH

I

AR

A

f = 10 kHz

1.5·V

1

180

non-repetitive avalanche energy

repetitive avalanche current

T=

°C

25

VJ

V

=

V

Symbol

Definition

Ratings

typ.

max.

I

R

V

I

A

V

F

2.04

R

1.6 K/W

R

min.

15

V

100

T

= 25°C

VJ

T

=

°C

VJ

mA

0.5

V

=

V

R

T

= 25°C

VJ

I =

A

F

V

T =

°C

C

140

P

tot

95

W

T

= 25°C

C

R

K/W

15

600

max. non-repetitive reverse blocking voltage

reverse current, drain current

forward voltage drop

total power dissipation

Conditions

Unit

2.25

T

= 25°C

VJ

150

V

F0

V

0.99

T

=

°C

VJ

175

15

mΩ

V

1.34

T

=

°C

VJ

I =

A

F

V

15

1.59

I =

A

F

30

I =

A

F

30

threshold voltage

slope resistance

for power loss calculation only

µA

150

V

600

max. repetitive reverse blocking voltage

T

= 25°C

VJ

C

J

12

junction capacitance

V =

V

400

T

= 25°C

f = 1 MHz

R

VJ

pF

I

FSM

t = 10 ms; (50 Hz), sine;

T

= 45°C

VJ

max. forward surge current

V = 0 V

R

T

=

°C

VJ

175

110

A

600

FAV

d =

rectangular

0.5

average forward current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Fast Diode

600

0.50

IXYS reserves the right to change limits, conditions and dimensions.

20131024b

Data according to IEC 60747and per semiconductor unless otherwise specified

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