DSEC29-06AC

12

3

EA

E1

b4

2x b2

2x e

3x b

A1

c

A2

W

Die konvexe Form des Substrates ist typ. < 0.04 mm über der

Kunststoffoberfläche der Bauteilunterseite

The convex bow of substrate is typ. < 0.04 mm over plastic

surface level of device bottom side

Die Gehäuseabmessungen entsprechen dem Typ TO-273

This drawing will meet all dimensions requiarement of JEDEC

min

max

min

max

A

4.00

5.00

0.157

0.197

A1

2.50

3.00

0.098

0.118

A2

1.60

1.80

0.063

0.071

b

0.90

1.30

0.035

0.051

b2

2.35

2.55

0.093

0.100

b4

1.25

1.65

0.049

0.065

c

0.70

1.00

0.028

0.039

D

15.00

16.00

0.591

0.630

D1

12.00

13.00

0.472

0.512

D2

1.10

1.50

0.043

0.059

D3

14.90

15.50

0.587

0.610

E

10.00

11.00

0.394

0.433

E1

7.50

8.50

0.295

0.335

e

2.54 BSC

0.100 BSC

L

13.00

14.50

0.512

0.571

L1

3.00

3.50

0.118

0.138

T°

42.5

47.5

W

-

0.1

-

0.004

Dim.

Millimeters

Inches

1

2

3

Outlines

ISOPLUS220

IXYS reserves the right to change limits, conditions and dimensions.

20131024b

Data according to IEC 60747and per semiconductor unless otherwise specified

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