AM28F010 datasheet(17/35 Pages) AMD

부품명	AM28F010

상세설명	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

PDF	35 Pages

Scroll/Zoom	100%

제조업체	AMD [Advanced Micro Devices]

홈페이지	http://www.amd.com

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17 / 35 page

Am28F010

Table 5.

Flashrite Programming Algorithm

Notes:

1. See AC and DC Characteristics for values of VPP parameters. The VPP power supply can be hard-wired to the device or

switchable. When VPP is switched, VPPL may be ground, no connect with a resistor tied to ground, or less than VCC + 2.0 V.

Program Verify is performed only after byte programming. A final read/compare may be performed (optional) after the register

is written with the read command.

Bus Operations

Command

Comments

Standby

Wait for VPP Ramp to VPPH (Note 1)

Initialize Pulse counter

Write

Program Setup

Data = 40h

Program

Valid Address/Data

Standby

Duration of Programming Operation (tWHWH1)

Write

Program-Verify (Note 2)

Data = C0h Stops Program Operation

Standby

Write Recovery Time before Read = 6 µs

Read

Read Byte to Verify Programming

Standby

Compare Data Output to Data Expected

Write

Reset

Data = FFh, resets the register for read operations.

Standby

Wait for VPP Ramp to VPPL (Note 1)

AM28F010 데이터시트(PDF) 17 Page - Advanced Micro Devices