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OP215GS 데이터시트(PDF) 3 Page - Analog Devices |
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OP215GS 데이터시트(HTML) 3 Page - Analog Devices |
3 / 8 page REV. A –3– OP215 SPECIFICATIONS ELECTRICAL CHARACTERISTICS OP215E OP215G Parameter Symbol Conditions Min Type Max Min Type Max Unit Input Offset Voltage VOS RS = 50 W 0.4 1.65 3.5 8.0 mV Average Input Offset Voltage Drift Without External Trim 1 TCVOS 315 6 V/ ∞C With External Trim TCVOSn RP = 100 k W 34 V/ ∞C Input Offset Current 2 IOS Tj = 70 ∞C 0.06 0.45 0.08 0.65 nA TA = 70 ∞C 0.08 0.80 0.10 1.2 nA Device Operating Input Bias Current2 IS Tj = 70 ∞C ±0.12 ±0.70 ±0.14 ±0.9 nA TA = 70 ∞C ±0.16 ±1.40 ±0.19 ±1.8 nA Device Operating Input Voltage Range IVR 10.2 14.7 10.1 14.7 V –10.2 –11.4 –10.1 –11.3 V Common-Mode CMRR VCM = ±IVR 80 98 7694 dB Rejection Ratio Power Supply Rejection PSRR VS = ±10 V to ±16 V 13 100 Ratio VS = ±10 V to ±15 V 20 159 V/V Large-Signal AVO RL 2 k W 50 180 35 130 V/mV Voltage Gain VO = ±10 V Output Voltage Swing VO RL 10 k W±12 ±13 ±12 ±13 V NOTES 1Sample tested. 2Input bias current is specified for two different conditions. The T j = 25 ∞C specification is with the junction at ambient temperature; the Device Operating specification is with the device operating in a warmed up condition at 25 ∞C ambient. The warmed up bias-current value is correlated to the junction temperature value via the curves of IS versus Tj and IS versus TA. PMI has a bias-current compensation circuit that gives improved bias current and bias current over temperature versus standard JFET input op amps. IS and IOS are measured at VCM = 0. Specifications are subject to change without notice. (at VS = ±15 V, 0 C TA 70 C for E Grade, –40 C TA +85 C for G Grade, unless otherwise noted.) |
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