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MSD2N60 데이터시트(PDF) 2 Page - Bruckewell Technology LTD

부품명 MSD2N60
상세설명  600V N-Channel MOSFET
PDF  9 Pages
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제조업체  BWTECH [Bruckewell Technology LTD]
홈페이지  http://www.bruckewell-semi.com
Logo BWTECH - Bruckewell Technology LTD

MSD2N60 데이터시트(HTML) 2 Page - Bruckewell Technology LTD

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MSD2N60 600V N-Channel MOSFET
©Bruckewell Technology Corporation Rev. A -2012
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
––
2.87
RθJA
Junction-to-Ambient
––
50.0
/W
℃
Electrical Characteristics
(Tc=25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min
Type
Max
Units
On Characteristics
VGS
Gate Threshold Voltage
VDS=VGS,ID=250μA
2.0
––
4.0
V
RDS(ON)
Static Drain-Source
On-Resistance
VGS=10V,ID=1.0A
––
4.0
4.7
Ω
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS=0 V , ID=250μA
600
––
––
V
△BVDSS
/△TJ
Breakdown Voltage Temperature
Coefficient
ID=250μA, Referenced to 25℃
––
0.6
––
V/℃
VDS=600V , VGS= 0 V
––
––
10
μA
IDSS
Zero Gate Voltage Drain Current
VDS=480V , VC= 125℃
––
––
100
μA
IGSSF
Gate-Body Leakage Current,
Forward
VGS=30V , VDS=0 V
––
––
100
nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS=-30V , VDS=0 V
––
––
–100
nA
Dynamic Characteristics
Ciss
Input Capacitance
––
320
420
pF
Coss
Output Capacitance
––
35
46
pF
Crss
Reverse Transfer Capacitance
VDS=25V, VGS=0V,
f=1.0MHz
––
4.5
6.0
pF
Switching Characteristics
td(on)
Turn-On Time
––
8
30
ns
tr
Turn-On Rise Time
––
23
60
ns
td(off)
Turn-Off Delay Time
––
25
60
ns
tf
Turn-Off Fall Time
VDS=300 V, ID=2A,
RG=25Ω
––
28
70
ns
Qg
Total Gate Charge
––
9.5
13
nC
Qgs
Gate-Source Charge
––
1.6
––
nC
Qgd
Gate-Drain Charge
VDS=480V,ID=2A,
VGS=10 V
––
4.0
––
nC



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