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20N15G-TN3-R 데이터시트(PDF) 2 Page - Unisonic Technologies |
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20N15G-TN3-R 데이터시트(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() 20N15 Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R502-904.C ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 150 V Gate-Source Voltage Continuous VGSS ±20 V Drain Current Continuous ID 20 A Single Pulsed (tp≤10µs) IDM 60 A Single Drain–to–Source Avalanche Energy Starting TJ=25°C (VDD=120V, VGS=10V, IL=20A, L=0.3mH) EAS 60 mJ Power Dissipation TO-220F1 PD 36 W TO-220F2 38 W TO-252 50 W Operating Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220F1/TO-220F2 θJA 62.5 °C/W TO-252 110 °C/W Junction to Case TO-220F1 θJC 3.47 °C/W TO-220F2 3.28 °C/W TO-252 2.5 °C/W |
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