20N15G-TN3-R datasheet(3/4 Pages) UTC

3 / 4 page

20N15

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-904.C

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=0.25mA, VGS=0V

150

Drain-Source Leakage Current

IDSS

VDS=150V, VGS=0V

µA

VDS=150V, VGS=0V, TJ=125°C

100

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=+20V, VDS=0V

100

Reverse

VGS=-20V, VDS=0V

100

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=0.25mA

2.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=10A

0.12 0.13

Ω

Drain–Source On–Voltage

VDS(ON)

VGS=10V, ID=20A

2.8

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1.0MHz

1133 1627

Output Capacitance

COSS

332 474

Reverse Transfer Capacitance

CRSS

105 174

SWITCHING PARAMETERS (Note 2)

Gate Charge

VGS=10V, VDS=75V, ID=20A

39.1 55.9

QGS

7.5

QGD

Turn-ON Delay Time

tD(ON)

VDD=75V, VGS=10V, ID=20A,

RG=9.1Ω

Rise Time

153

Turn-OFF Delay Time

tD(OFF)

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

(Note 1)

VSD

IS=20A, VGS=0V

1.5

Maximum Continuous Drain-Source Diode

Forward Current

Pulsed Drain-Source Current

ISM

Body Diode Reverse Recovery Time

tRR

IS=20A, VGS=0V, dIS/dt=100A/µs

160

Body Diode Reverse Recovery Charge

QRR

1.1

µC

Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.

2. Switching characteristics are independent of operating junction temperature.

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