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IXKC25N80C 데이터시트(PDF) 4 Page - IXYS Corporation

부품명 IXKC25N80C
상세설명  N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface
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제조업체  IXYS [IXYS Corporation]
홈페이지  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXKC25N80C 데이터시트(HTML) 4 Page - IXYS Corporation

  IXKC25N80C Datasheet HTML 1Page - IXYS Corporation IXKC25N80C Datasheet HTML 2Page - IXYS Corporation IXKC25N80C Datasheet HTML 3Page - IXYS Corporation IXKC25N80C Datasheet HTML 4Page - IXYS Corporation  
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© 2008 IXYS All rights reserved
4 - 4
20080526a
IXKC 25N80C
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 10
Typ. Avalanche Energy
Fig. 11
Drain-Source
Breakdown Voltage
Fig. 12
Maximum Transient
Thermal Resistance
25
50
75
100
150
0
50
100
150
200
250
300
350
400
450
500
550
600
700
T
J
[°C]
125
650
I
D
= 3.4 A
V
DD = 50 V
-60
-20
20
60
100
180
720
740
760
780
800
820
840
860
880
900
920
940
980
T
J
[°C]
140
960
1
10
100
1000
0.0
0.2
0.4
0.6
0.8
1.0
Pulse Width [ms]



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