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MF35 데이터시트(PDF) 1 Page - Dynex Semiconductor |
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MF35 데이터시트(HTML) 1 Page - Dynex Semiconductor |
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1 / 8 page ![]() MF35 1/8 APPLICATIONS s Inverse, Parallel Or Series Connected Diode s Power Supplies s High Frequency Applications FEATURES s Glass Passivation s High Voltage Capability s Fast Recovery Characteristics VOLTAGE RATINGS KEY PARAMETERS V RRM 1200V I F(AV) 40A I FSM 400A Q r 10 µC t rr 0.2ns 1200 1000 800 600 MF35 - 1200 MF35 - 1000 MF35 - 800 MF35 - 600 Conditions V RSM = V RRM +100V Lower voltage grades available. For stud anode add suffix 'R' to type number. e.g. MF35-1200R. Type Number Repetitive Peak Reverse Voltage V RRM V Outline type code: DO5. See Package Details for further information. CURRENT RATINGS Symbol Parameter Conditions Units Max. I F(AV) Mean forward current I F(RMS) RMS value I F Continuous (direct) forward current Half sine wave resistive load, T case = 65 oC40 A T case = 65 oC63 A T case = 65 oC50 A MF35 Fast Recovery Diode Replaces March 1998 version, DS4625-3.1 DSDS4625-4.0 January 2000 |
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