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MF35 데이터시트(PDF) 2 Page - Dynex Semiconductor

부품명 MF35
상세설명  Fast Recovery Diode
PDF  8 Pages
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제조업체  DYNEX [Dynex Semiconductor]
홈페이지  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

MF35 데이터시트(HTML) 2 Page - Dynex Semiconductor

  MF35 Datasheet HTML 1Page - Dynex Semiconductor MF35 Datasheet HTML 2Page - Dynex Semiconductor MF35 Datasheet HTML 3Page - Dynex Semiconductor MF35 Datasheet HTML 4Page - Dynex Semiconductor MF35 Datasheet HTML 5Page - Dynex Semiconductor MF35 Datasheet HTML 6Page - Dynex Semiconductor MF35 Datasheet HTML 7Page - Dynex Semiconductor MF35 Datasheet HTML 8Page - Dynex Semiconductor  
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MF35
2/8
SURGE RATINGS
Conditions
Max.
Units
400
A
800
A
2s
I
2t for fusing
I
2t
Surge (non-repetitive) forward current
I
FSM
Parameter
Symbol
10ms half sine; with V
RRM ≤ 10V, Tj = 125
oC
THERMAL AND MECHANICAL DATA
dc
Conditions
Max.
Units
oC/W
-
0.2
Thermal resistance - case to heatsink
R
th(c-h)
Thermal resistance - junction to case
R
th(j-c)
Mounting torque 3.5Nm
with mounting compound
Symbol
Parameter
-
0.8
oC/W
Min.
t
rr
5
Symbol
Typ.
Units
Parameter
V
FM
Forward voltage
I
RM
Peak reverse current
Reverse recovery time
Q
R
Recovered charge
V
TO
Threshold voltage
r
T
Slope resistance
At T
vj = 125
o
C
-
7.0
m
Ω
At T
vj = 125
o
C
-
1.2
V
-10
µC
-
200
ns
At V
RRM, Tcase = 100
oC-
mA
At 120A peak, T
case = 25
o
C
-
2.0
V
Conditions
Max.
CHARACTERISTICS
-
125
oC
˚C
125
-55
Storage temperature range
T
stg
T
vj
Virtual junction temperature
Forward (conducting)
-
125
oC
10ms half sine; T
j = 125
oC
Nm
3.8
3.2
Mounting torque
-
Reverse (blocking)
I
F = 1A, diRR/dt = 25A/µs, Tcase = 25˚C,
V
R = 100V
I
F = 50A, diRR/dt = 50A/µs, Tcase = 25˚C,
V
R = 100V



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