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L6747C 데이터시트(PDF) 12 Page - STMicroelectronics |
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L6747C 데이터시트(HTML) 12 Page - STMicroelectronics |
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12 / 15 page ![]() Device description and operation L6747C 12/15 Doc ID 17127 Rev 1 (VCC, PVCC and BOOT capacitors) close to the device with the shortest possible loop, using wide copper traces to minimize parasitic inductance. Systems that do not use Schottky diodes in parallel with the low-side MOSFET might show large negative spikes on the PHASE pin. This spike can be limited, as can the positive spike, but has an additional consequence: it causes the bootstrap capacitor to be overcharged. This extra charge can cause, in the worst case condition of maximum input voltage and during particular transients, that boot-to-phase voltage exceeds the absolute maximum ratings causing device failures. It is therefore suggested in this cases to limit this extra charge by adding a small RBOOT resistor in series with the boot capacitor. The use of RBOOT also contributes in the limitation of the spike present on the BOOT pin. For heat dissipation, place the copper area under the IC. This copper area may be connected by internal copper layers through several VIAs to improve thermal conductivity. The combination of copper pad, copper plane and VIAs under the driver allows the device to achieve its best thermal performance. Figure 7. Driver turn-on and turn-off paths Figure 8. External component placement example RGATE RINT CGD CGS CDS VCC LS DRIVER LS MOSFET GND LGATE RGATE RINT CGD CGS CDS BOOT HS DRIVER HS MOSFET PHASE HGATE VCC RBOOT CBOOT RBOOT CBOOT Rboot Cboot 1 2 3 4 LGATE GND PHASE UGATE VCC EN PWM BOOT 5 6 7 8 D C |
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