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L6747C 데이터시트(PDF) 12 Page - STMicroelectronics

부품명 L6747C
상세설명  High current MOSFET driver
PDF  15 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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L6747C 데이터시트(HTML) 12 Page - STMicroelectronics

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Device description and operation
L6747C
12/15
Doc ID 17127 Rev 1
(VCC, PVCC and BOOT capacitors) close to the device with the shortest possible loop,
using wide copper traces to minimize parasitic inductance.
Systems that do not use Schottky diodes in parallel with the low-side MOSFET might show
large negative spikes on the PHASE pin. This spike can be limited, as can the positive spike,
but has an additional consequence: it causes the bootstrap capacitor to be overcharged.
This extra charge can cause, in the worst case condition of maximum input voltage and
during particular transients, that boot-to-phase voltage exceeds the absolute maximum
ratings causing device failures. It is therefore suggested in this cases to limit this extra
charge by adding a small RBOOT resistor in series with the boot capacitor. The use of RBOOT
also contributes in the limitation of the spike present on the BOOT pin.
For heat dissipation, place the copper area under the IC. This copper area may be
connected by internal copper layers through several VIAs to improve thermal conductivity.
The combination of copper pad, copper plane and VIAs under the driver allows the device to
achieve its best thermal performance.
Figure 7.
Driver turn-on and turn-off paths
Figure 8.
External component placement example
RGATE
RINT
CGD
CGS
CDS
VCC
LS DRIVER
LS MOSFET
GND
LGATE
RGATE
RINT
CGD
CGS
CDS
BOOT
HS DRIVER
HS MOSFET
PHASE
HGATE
VCC
RBOOT
CBOOT
RBOOT
CBOOT
Rboot
Cboot
1
2
3
4
LGATE
GND
PHASE
UGATE
VCC
EN
PWM
BOOT
5
6
7
8
D
C



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