 |
전자부품 데이터시트 검색엔진 |
|
|
전자부품 데이터시트 검색엔진 |
|
IRF3205STRR 데이터시트(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRF3205STRR 데이터시트(HTML) 2 Page - International Rectifier |
|
|
2 / 11 page  IRF3205S/IRF3205L 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 62A, VGS = 0V trr Reverse Recovery Time ––– 69 104 ns TJ = 25°C, IF = 62A Qrr Reverse Recovery Charge ––– 143 215 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 110 390 A Starting T J = 25°C, L = 138µH RG = 25 Ω, IAS = 62A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: I SD ≤ 62A, di/dt ≤ 207A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. * When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 8.0 m Ω VGS = 10V, ID = 62A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 44 ––– ––– S VDS = 25V, ID = 62A ––– ––– 25 µA VDS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 146 ID = 62A Qgs Gate-to-Source Charge ––– ––– 35 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 54 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 14 ––– VDD = 28V tr Rise Time ––– 101 ––– ID = 62A td(off) Turn-Off Delay Time ––– 50 ––– RG = 4.5 Ω tf Fall Time ––– 65 ––– VGS = 10V, See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 3247 ––– VGS = 0V Coss Output Capacitance ––– 781 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 211 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 1050 264 mJ IAS = 62A, L = 138µH nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175°C. |
유사한 부품 번호 - IRF3205STRR |
|
유사한 설명 - IRF3205STRR |
|
|
|
링크 URL |
| 개인정보취급방침 |
| ALLDATASHEET.CO.KR |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
