| 전자부품 데이터시트 검색엔진 |
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MAAMSS0045 데이터시트(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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MAAMSS0045 데이터시트(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
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2 / 6 page ![]() • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 High Dynamic Range Low Noise Amplifier 1400 - 2000 MHz Rev. V1 MAAMSS0045 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Absolute Maximum Ratings 4,5 Parameter Absolute Maximum VDD +10 VDC Input Power +17 dBm Current6 80 mA Channel Temperature7 +150°C Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C 4. Exceeding any one or combination of these limits may cause permanent damage. 5. M/A-COM does not recommend sustained operation near these survivability limits. 6. When pin #2 is used to increase current. (See note 9) 7. Thermal resistance ( θjc) = +99°C/W. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Electrical Specifications: TA = +25°C, Z0 = 50 Ω, F = 1785 MHz, Pin = -30 dBm Parameter Test Conditions Units Min. Typ. Max. Gain 5 V, 45 mA3 3 V, 20 mA dB dB 12.0 — 14 12.5 — — Noise Figure 5 V, 45 mA3 3 V, 20 mA dB dB — — 1.4 1.5 1.8 — Input VSWR — Ratio — 1.5:1 — Output VSWR — Ratio — 2.0:1 — Output 1 dB Compression 5 V, 45 mA3 3 V, 20 mA dBm dBm — — 16.0 9.0 — — Input IP3 5 V, 45 mA3 3 V, 20 mA dBm dBm 13.0 — 15 8.0 — — Reverse Isolation — dB — 22 — Drain Current 5 V, 45 mA2 mA 30 45 60 3. Using external 15 Ω resistor. See functional schematic on page 3. |
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