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AT45DB321D 데이터시트(PDF) 30 Page - List of Unclassifed Manufacturers

부품명 AT45DB321D
상세설명  32Mb, 2.5V or 2.7V DataFlash
PDF  52 Pages
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제조업체  ETC2 [List of Unclassifed Manufacturers]
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AT45DB321D 데이터시트(HTML) 30 Page - List of Unclassifed Manufacturers

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AT45DB321D [DATASHEET]
3597T–DFLASH–11/2013
Table 16-3. AC Characteristics – RapidS / Serial Interface
Symbol
Parameter
AT45DB321D
(2.5V Version)
AT45DB321D
Min
Typ
Max
Min
Typ
Max
Unit
fSCK
SCK frequency
50
66
MHz
fCAR1
SCK frequency for continuous array read
50
66
MHz
fCAR2
SCK frequency for continuous array read
(Low frequency)
33
33
MHz
tWH
SCK high time
6.8
6.8
ns
tWL
SCK low time
6.8
6.8
ns
tSCKR(1)
SCK rise time, peak-to-peak (slew rate)
0.1
0.1
V/ns
tSCKF(1)
SCK fall time, peak-to-peak (slew rate)
0.1
0.1
V/ns
tCS
Minimum CS high time
50
50
ns
tCSS
CS setup time
5
5
ns
tCSH
CS hold time
5
5
ns
tCSB
CS high to RDY/BUSY low
100
100
ns
tSU
Data in setup time
2
2
ns
tH
Data in hold time
3
3
ns
tHO
Output hold time
0
0
ns
tDIS
Output disable time
27
35
27
35
ns
tV
Output valid
8
6
ns
tWPE
WP low to protection enabled
1
1
μs
tWPD
WP high to protection disabled
1
1
μs
tEDPD
CS high to deep power-down mode
3
3
μs
tRDPD
CS high to standby mode
35
35
μs
tXFR
Page to buffer transfer time
300
300
μs
tcomp
Page to buffer compare time
300
300
μs
tEP
Page erase and programming time
(512-/528-bytes)
17
40
17
40
ms
tP
Page programming time (512/528 bytes)
3
6
3
6
ms
tPE
Page erase time (512/528 bytes)
15
35
15
35
ms
tBE
Block erase time (4,096/4,224 bytes)
45
100
45
100
ms
tSE
Sector erase time (131,072/135,168 bytes)
1.6
5
1.6
5
s
tCE
Chip erase time
TBD
TBD
TBD
TBD
s
tRST
RESET pulse width
10
10
μs
tREC
RESET recovery time
1
1
μs



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