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AT45DB321D 데이터시트(PDF) 4 Page - List of Unclassifed Manufacturers

부품명 AT45DB321D
상세설명  32Mb, 2.5V or 2.7V DataFlash
PDF  52 Pages
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제조업체  ETC2 [List of Unclassifed Manufacturers]
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Logo ETC2 - List of Unclassifed Manufacturers

AT45DB321D 데이터시트(HTML) 4 Page - List of Unclassifed Manufacturers

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AT45DB321D [DATASHEET]
3597T–DFLASH–11/2013
Figure 1-2. Block Diagram
2.
Memory Array
To provide optimal flexibility, the AT45DB321D memory array is divided into three levels of granularity comprising sectors,
blocks, and pages. The “Memory Architecture Diagram” illustrates the breakdown of each level, and details the number of
pages per sector and block. All program operations to the DataFlash device occur on a page-by-page basis. The erase
operations can be performed at the chip, sector, block, or page level.
Figure 2-1. Memory Architecture Diagram
Flash Memory Array
Page (512-/528-bytes)
Buffer 2 (512-/528-bytes)
Buffer 1 (512-/528-bytes)
I/O Interface
SCK
CS
RESET
VCC
GND
RDY/BUSY
WP
SO
SI
Sector 0a = 8 pages
4,096/4,224 bytes
Sector 0b = 120 pages
61,440/63,360 bytes
Block = 4,096/4,224 bytes
8 Pages
Sector 0a
Page = 512/528 bytes
Page 0
Page 1
Page 6
Page 7
Page 8
Page 9
Page 8,190
Page 8,191
Page 14
Page 15
Page 16
Page 17
Page 18
Sector Architecture
Block Architecture
Page Architecture
Block 0
Block 1
Block 14
Block 15
Block 16
Block 17
Block 1,022
Block 1,023
Block 30
Block 31
Block 32
Block 33
Sector 63 = 128 pages
65,536/67,584 bytes
Block 2
Sector 1 = 128 pages
65,536/67,584 bytes
Sector 62 = 128 pages
65,536/67,584 bytes
Sector 2 = 128 pages
65,536/67,584 bytes



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