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AT45DB321E 데이터시트(PDF) 70 Page - List of Unclassifed Manufacturers |
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AT45DB321E 데이터시트(HTML) 70 Page - List of Unclassifed Manufacturers |
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70 / 73 page ![]() 70 AT45DB321E 8784F–DFLASH–11/2013 29. Revision History Doc. Rev. Date Comments 8784F 11/2013 Corrected Product ID Values for Byte 2 in Figure 12.1, Table 12.1 and Table 12.2. Corrected Memory Architecture Diagram, Figure 3-1. 8784E 10/2013 Updated spec in Continuous Array Read (1Bh Opcode) to fCAR4. Corrected Low Power Read Option (up to 15MHz). Corrected Ultra-Deep Power-Down current (400nA typical). Updated spec for Input High Voltage (Max) to VCC + 0.6V. 8784D 7/2013 Updated Auto Page Rewrite cycle to 50,000 cumulative page erase/program operations. Corrected Page Erase and Programming Time specification to 35 ms maximum. Updated DC conditions for VOL, ICC3 and ICC4. Added reserved part order codes. Changed datasheet status from preliminary to complete. 8784C 6/2013 Updated electrical and power specifications. “ Buffer 1 (or 2) Read” moved from group C to Group A in Operation Mode Summary. Removed references to 2.5V minimum power supply. 8784B 11/2012 Added Legacy Commands table. Updated to Adesto template. 8784A 08/2012 Initial document release. |
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