ACT5880 datasheet(59/87 Pages) ACTIVE-SEMI

59 / 87 page

ACT5880

Rev 2, 03-Sep-13

- 59 -

www.active-semi.com

ActivePMU

TM and ActivePathTM are trademarks of Active-Semi.

I2CTM is a trademark of NXP.

Active-Semi Confidential―Do Not Copy or Distribute

100

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-2

-1.5

-1

-0.5

0.5

1.5

123456

012

0.1

0.2

0.3

0.4

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0.6

0.7

0.8

0.9

(TA = 25°C, unless otherwise specified.)

TYPICAL PERFORMANCE CHARACTERISTICS CONT’D

23. The Charge Current vs. VVBAT, VCHGIN=6V

24. The Charge Current vs. Ambient Temperature, VCHGIN=6V

Ambient Temperature (°C)

CH1: VVBAT, AC coupled, 100mV/div

CH2: Load Current, 200mA/div

TIME: 200μs/div

25. Charger Load Transition Response, LDO Mode

26. Backup Battery Charge Current vs. VVSYS

CH1

27. The DC Sweep Histogram DNL

28. The DC Input Effective Numbers of Bits

VVBAT

CH2

ACIN/CHGLEV=1/1

ACIN/CHGLEV=0/1

ACIN/CHGLEV=0/0

ISET for 0.45A Max

ISET for 0.3A Max

ISET for 0.09A Max

ISET for 1.0A Max

ISET for 0.85A Max

VVSYS

CODE (Decimal)

CODE (LSB)

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