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ACT5880 데이터시트(PDF) 8 Page - Active-Semi, Inc

부품명 ACT5880
상세설명  15 Channels Advanced PMU for Smart Phone
PDF  87 Pages
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제조업체  ACTIVE-SEMI [Active-Semi, Inc]
홈페이지  http://www.active-semi.com
Logo ACTIVE-SEMI - Active-Semi, Inc

ACT5880 데이터시트(HTML) 8 Page - Active-Semi, Inc

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ACT5880
Rev 2, 03-Sep-13
- 8 -
www.active-semi.com
ActivePMU
TM and ActivePathTM are trademarks of Active-Semi.
I2CTM is a trademark of NXP.
Copyright © 2013 Active-Semi, Inc.
Active-Semi Confidential―Do Not Copy or Distribute
PIN DESCRIPTIONS
PIN
NAME
DESCRIPTION
C4
OUT4
The Output of the LDO REG4. Bypass to GA with a 3.3μF high quality ceramic capacitor.
C5
CHGIN
The Charger Input. Same function as pin A5 and pin B5.
C6
VBAT
The Charger Output. Same function as pin B6 and pin B7.
C7
INL6
The Input Node for the LDO REG6. Bypass to GA with a 1μF high quality ceramic capacitor.
C8
nPBIN
The Push-Button Input. Drive nPBIN to GA through a 50kΩ resistor to enable the IC. When the IC is
enabled, driving nPBIN to GA through a 50kΩ resistor asserts the nIRQ to call interrupt service from
the host system, and driving nPBIN to GA directly asserts a manual reset procedure. nPBIN is
internally pulled up to VSYS through a 35kΩ resistor.
C9
nPBSTAT
Active-Low Open-Drain Push-Button Status Output. nPBSTAT is asserted low whenever the
nPBIN is pushed, and is high-Z otherwise.
D1
ODO3
The Open Drain Output 3. A current driver output with programmable output current. It could operate
in constant current mode, switch on/off mode or PWM mode. The maximum voltage is 6V for this pin.
D2
OUT9
The Output of the LDO REG9. Bypass to GA with a 2.2μF high quality ceramic capacitor.
D3
OUT8
The Output of the LDO REG8. Bypass to GA with a 3.3μF high quality ceramic capacitor.
D4
OUT5
The Output of the LDO REG5. Bypass to GA with a 2.2μF high quality ceramic capacitor.
D5
INL7
The Input Node for the LDO REG7. Bypass to GA with a 1μF high quality ceramic capacitor.
D6
OUT6
The Output of the LDO REG6. Bypass to GA with a 3.3μF high quality ceramic capacitor.
D7
OUT7
The Output of the LDO REG7. Bypass to GA with a 3.3μF high quality ceramic capacitor.
D8
EN6
The Enable Input to the LDO REG6, Active High. This input takes effective only when this IC is
enabled.
D9
EN9
The Enable Input to the LDO REG9, Active High. This input takes effective only when this IC is
enabled.
E1
GLED
The Ground Node for ODO1, ODO2 and ODO3.
E2
ODO2
The Open Drain Output 2. A current driver output with programmable output current. It could operate
in constant current mode, switch on/off mode or PWM mode. The maximum voltage is 6V for this pin.
E3
OUT11
The Output of the LDO REG11. Bypass to GA with a 1μF high quality ceramic capacitor.
E4
INL1011
The Input Node for the LDO REG10 and REG11. Bypass to GA with a 1μF high quality ceramic
capacitor.
E5
OUT10
The Output of the LDO REG10. Bypass to GA with a 1.5μF high quality ceramic capacitor.
E6
GP2
The Ground Path of the Step-down DC/DC REG2. Provide the direct ground return path between
the internal switch, the external storage capacitor and the input decoupling capacitor. Same function
as pin E7. Connect GA, GP1, GP2 and GP3 to a single point as close to the IC as possible.
E7
GP2
The Ground Path of the Step-down DC/DC REG2. Same function as pin E6.



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