STF40NF03L datasheet(4/14 Pages) STMICROELECTRONICS

4 / 14 page

Electrical characteristics

STF40NF03L, STP40NF03L

4/14

Doc ID 6794 Rev 8

Electrical characteristics

(TCASE=25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250 µA, VGS =0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = max ratings

VDS = max ratings,

TC = 125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ±16 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

1.7

2.5

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 20 A

VGS = 4.5 V, ID = 20 A

0.018

0.028

0.022

0.035

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Forward

transconductance

VDS = 10 V, ID = 20 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

770

255

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 15 V, ID = 20 A

RG =4.7 Ω VGS = 4.5 V

(see

Figure 16)

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 15 V, ID = 40 A,

VGS = 4.5 V

(see

Figure 17)

10.5

4.5

STF40NF03L 데이터시트(PDF) 4 Page - STMicroelectronics

STF40NF03L 데이터시트(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

데이터시트 다운로드

링크 URL