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STF40NF03L 데이터시트(PDF) 5 Page - STMicroelectronics |
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STF40NF03L 데이터시트(HTML) 5 Page - STMicroelectronics |
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5 / 14 page ![]() STF40NF03L, STP40NF03L Electrical characteristics Doc ID 6794 Rev 8 5/14 Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) - 40 160 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 40 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 40 A, di/dt = 100 A/µs, VDD = 15 V, Tj = 150 °C (see Figure 18) - 34.5 30 2 ns nC A |
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