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FAR-F5CH-856M50-L2DM-R 데이터시트(PDF) 7 Page - fujitsu semiconductor |
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FAR-F5CH-856M50-L2DM-R 데이터시트(HTML) 7 Page - fujitsu semiconductor |
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7 / 39 page ![]() 7 F5CH Series (L2 type) 10. GSM/NMT (Tx) High Attenuation Type Part number: FAR-F5CH-902M50-L2EW (Ta = –30 to +85 °C) 11. GSM/NMT (Rx) Part number: FAR-F5CH-947M50-L2EM (Ta = –30 to +85 °C) Parameter Symbol Condition Value Unit Remarks Min. Typ. Max. Insertion loss IL 890 to 915 MHz —2.9 3.5 dB Inband ripple — 890 to 915 MHz —1.0 2.0 dB Absolute attenuation — DC to 845 MHz 32 34 — dB — 845 to 870 MHz 20 35 — dB — 935 to 980 MHz 20 35 — dB — 980 to 1200 MHz 35 40 — dB — 1200 to 2000 MHz 25 30 — dB Inband VSWR — 890 to 915 MHz —1.6 2.0 — Parameter Symbol Condition Value Unit Remarks Min. Typ. Max. Insertion loss IL 935 to 960 MHz —2.5 3.5 dB Inband ripple — 935 to 960 MHz —1.0 2.0 dB Absolute attenuation — DC to 800 MHz 20 25 — dB — 890 to 915 MHz 20 35 — dB — 980 to 1025 MHz 15 28 — dB — 1025 to 1105 MHz 35 38 — dB — 1105 to 1600 MHz 25 29 — dB — 1600 to 2000 MHz 20 26 — dB Inband VSWR — 935 to 960 MHz —1.7 2.5 — |
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