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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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FAR-F5CH-856M50-L2DM-R 데이터시트(PDF) 8 Page - fujitsu semiconductor |
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FAR-F5CH-856M50-L2DM-R 데이터시트(HTML) 8 Page - fujitsu semiconductor |
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8 / 39 page  8 F5CH Series (L2 type) 12. GSM/NMT (Rx) HIGH ATTENUATION TYPE Part number: FAR-F5CH-947M50-L2EV (Ta = –30 to +85 °C) 13. EGSM (Tx) Part number: FAR-F5CH-897M50-L2KL (Ta = –20 to +80 °C) Parameter Symbol Condition Value Unit Remarks Min. Typ. Max. Insertion loss IL 935 to 960 MHz —2.8 3.5 dB Inband ripple — 935 to 960 MHz —1.0 2.0 dB Absolute attenuation — DC to 770 MHz 32 34 — dB — 770 to 855 MHz 35 38 — dB — 855 to 871 MHz 40 43 — dB — 890 to 915 MHz 20 30 — dB — 980 to 1025 MHz 15 25 — dB — 1025 to 1077 MHz 40 46 — dB — 1077 to 1105 MHz 43.5 47 — dB — 1105 to 2000 MHz 25 30 — dB — 2000 to 3000 MHz 10 12 — dB Inband VSWR — 935 to 960 MHz —1.6 2.0 — Parameter Symbol Condition Value Unit Remarks Min. Typ. Max. Insertion loss IL 880 to 915 MHz — 2.4 4.0 dB Inband ripple — 880 to 915 MHz — 1.0 2.0 dB Absolute attenuation — DC to 845 MHz 20 21 — dB — 925 to 935 MHz 5 — — dB –20 to +25 °C 8 10 — dB +25 to +80 °C — 935 to 980 MHz 20 25 — dB Inband VSWR — 880 to 915 MHz — 1.9 2.5 — |
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