SSF7607 datasheet(1/8 Pages) SILIKRON

부품명	SSF7607

상세설명	Advanced MOSFET process technology

PDF	8 Pages

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제조업체	SILIKRON [Silikron Semiconductor Co.,LTD.]

홈페이지	http://www.silikron.com

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1 / 8 page

SSF7607

©Silikron Semiconductor CO.,LTD.

2012.04.28

Version : 1.0

page 1 of 8

www.silikron.com

Main Product Characteristics:

Features and Benefits:

Description:

Absolute max Rating:

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

130①

A

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

91①

IDM

Pulsed Drain Current ②

510

PD @TC = 25°C

Power Dissipation ③

250

W

Linear Derating Factor

1.6

W/°C

VDS

Drain-Source Voltage

75

V

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy @ L=0.3mH

390

mJ

IAS

Avalanche Current @ L=0.3mH

51

A

TJ

TSTG

Operating Junction and Storage Temperature Range

-55 to + 175

°C

VDSS

75V

RDS(on)

5.5m

Ω(typ.)

ID

130A ①

TO220

Marking and pin

Assignment

Schematic diagram



Advanced MOSFET process technology



Special designed for PWM, load switching and

general purpose applications



Ultra low on-resistance with low gate charge



Fast switching and reverse body recovery



175℃ operating temperature

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with

high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable

device for use in power switching application and a wide variety of other applications.

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