SSF7607 datasheet(2/8 Pages) SILIKRON

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SSF7607

©Silikron Semiconductor CO., LTD.

2012.04.28

Version: 1.0

page 2 of 8

www.silikron.com

Thermal Resistance

Symbol

Characterizes

Typ.

Max.

Units

RθJC

Junction-to-case ③

—

0.61

℃/W

RθJA

Junction-to-ambient (t ≤ 10s) ④

—

℃/W

Electrical Characterizes @T

A=25℃ unless otherwise specified

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

—

VGS = 0V, ID = 250μA

RDS(on)

Static Drain-to-Source on-resistance

—

5.5

mΩ

VGS=10V,ID = 30A

—

9.4

—

TJ = 125℃

VGS(th)

Gate threshold voltage

—

VDS = VGS, ID = 250μA

—

2.6

—

TJ = 125℃

IDSS

Drain-to-Source leakage current

—

μA

VDS = 75V,VGS = 0V

—

TJ = 125℃

IGSS

Gate-to-Source forward leakage

—

100

VGS =20V

—

-100

VGS = -20V

Total gate charge

—

147

—

ID = 30A,

VDS= 30V,

VGS = 10V

Qgs

Gate-to-Source charge

—

Qgd

Gate-to-Drain("Miller") charge

—

td(on)

Turn-on delay time

—

VGS=10V, VDS=30V,

RL=15Ω,

RGEN=2.5Ω

Rise time

—

td(off)

Turn-Off delay time

—

Fall time

—

Ciss

Input capacitance

—

12109

—

VGS = 0V

VDS = 25V

ƒ = 1MHz

Coss

Output capacitance

—

544

—

Crss

Reverse transfer capacitance

—

331

—

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

130 ①

MOSFET symbol

showing

the

integral reverse

p-n junction diode.

ISM

Pulsed Source Current

(Body Diode)

—

510

Diode Forward Voltage

—

0.87

1.3

IS=30A, VGS=0V

trr

Reverse Recovery Time

—

TJ = 25°C, IF =75A, di/dt =

0A/μs

Qrr

Reverse Recovery Charge

—

155

—

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