L99H01 datasheet(20/53 Pages) STMICROELECTRONICS

20 / 53 page

Electrical specifications

L99H01

20/53

DocID15567 Rev 6

2.5

SPI - electrical characteristics

VS =6V to 28 V, VCC = 3 V to 5.3 V, Tj = -40°C to 150°C, unless otherwise specified. The

voltages are referred to GND and currents are assumed positive, when the current flows

into the pin.

Table 19. DI timing(1)

DI timing parameters tested in production by a passed / failed test:

Tj = -40°C / +25°C: SPI communication @ 2 MHz.

Tj = +125°C: SPI communication @ 1.25 MHz.

Item

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

19.1

tCLK

Clock period

—

1000

—

19.2

tCLKH

Clock high time

—

400

—

19.3

tCLKL

Clock low time

—

400

—

19.4

tset CSN

CSN setup time, CSN low

before rising edge of CLK

—

400

—

19.5

tset CLK

CLK setup time, CLK high

before rising edge of CSN

—

400

—

19.6

tset DI

DI setup time

—

200

—

19.7

thold DI

DI hold time

—

200

—

19.8

tr in

Rise time of input signal DI,

CLK, CSN

——

100

19.9

tf in

Fall time of input signal DI,

CLK, CSN

——

100

Table 20. DO

Item

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

20.1

VDOL

Low-level output

voltage

ID =-4 mA

0.2

0.4

20.2

VDOH

High-level output

voltage

ID =4 mA

VCC -0.4 VCC -0.2

20.3

IDOLK

Tristate leakage

current

VCSN =VCC;

0V <VDO <VCC

-10

µA

20.4

CDO

(1)

Value of input capacity is not measured in production test. Parameter guaranteed by design.

Tristate input

capacitance

VCSN =VCC;

0V <VCC <5.3 V

L99H01 데이터시트(PDF) 20 Page - STMicroelectronics

L99H01 데이터시트(HTML) 20 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53

데이터시트 다운로드

링크 URL