2N7002 datasheet(1/4 Pages) MAKOSEMI

부품명	2N7002

상세설명	Small Signal MOSFET Transistor

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제조업체	MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]

홈페이지	http://www.makosemi.hk/

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Small Signal MOSFET Transistor

2N7002

1

FEATURES

High Density Cell Design For Low

RDS(ON)。

Voltage Controlled Small Switch.

Rugged and Reliable.

High Saturation Current Capability.

APPLICATIONS

N-channel enhancement mode effect transistor.

Switching application.

SOT-23

ORDERING INFORMATION

Type No.

Marking

Package Code

2N7002

7002/702/72*

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

VDSS

Drain-Source voltage

60

V

VDGR

Drain-Gate voltage(RGS

≤1MΩ)

60

V

VGSS

Gate -Source voltage

- continuous

-Non Repetitive (tp<50

μs)

±20

±40

V

ID

Maximum Drain current

-continuous

-Pulsed

115

800

mA

PD

Power Dissipation

180

mW

RθJA

Thermal resistance,Junction-to-Ambient

6

00

℃/W

TJ, Tstg

Junction and Storage Temperature

-

50-150

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

MAKO Semiconductor Co., Limited

www.makosemi.hk

4008-378-873

유사한 부품 번호 - 2N7002

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Pan Jit International I...	2N7002	91Kb / 6P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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2N7002 데이터시트(PDF) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED

2N7002 데이터시트(HTML) 1 Page - MAKO SEMICONDUCTOR CO.,LIMITED

유사한 부품 번호 - 2N7002

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