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2N7002 데이터시트(PDF) 2 Page - MAKO SEMICONDUCTOR CO.,LIMITED |
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2N7002 데이터시트(HTML) 2 Page - MAKO SEMICONDUCTOR CO.,LIMITED |
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2 / 4 page ![]() Small Signal MOSFET Transistor 2N7002 2 Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=10 μA 60 Gate Threshold Voltage VGS(th) VDS=VGS, ID=250 μA 1 2.1 2.5 V Gate-body Leakage Forward Reverse IGSS VDS=0V, VGS=20V VDS=0V, VGS=-20V 100 -100 nA VDS=60V, VGS=0V 1 Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V,Tj=125℃ 500 μA On-state Drain Current ID(On) VGS=10V, VDS ≥2.0VDS(ON) 500 2700 mA Drain-Source on-voltage VDS(ON) VGS=10V,ID=500mA VGS=5V,ID=50mA 0.6 0.09 3.75 1.5 V Forward transconductance gFS VDS ≥2.0VDS(ON),ID=200mA 80 320 mS Static drain-Source on-resistance RDS(ON) VGS=10V,ID=500mA VGS=10V,ID=500mA,Tj=100℃ VGS=5.0V,ID=50mA VGS=5.0V,ID=50mA, Tj=100℃ 1.2 1.7 1.7 2.4 7.5 13.5 7.5 13.5 Ω Drain-Source diode forward voltage VSD VGS=0V,ID=115mA 0.88 1.5 V Input capacitance CISS 20 50 Output capacitance COSS 11 25 Reverse transfer capacitance CRSS VDS=25V,VGS=0V,f=1.0MHz 4 5 pF Turn-On Delay Time tD(ON) 20 ns Turn-Off Delay Time tD(OFF) VDD = 30V, ID= 0.2A, RL = 150 Ω, VGS= 10V, RGEN= 25 Ω 20 ns TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified MAKO Semiconductor Co., Limited www.makosemi.hk 4008-378-873 |
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