HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HSP200203

Issued Date : 1998.01.06

Revised Date : 2002.03.04

Page No. : 1/3

HSC1959SP

HSMC Product Specification

HSC1959SP

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HSC1959Y is designed for audio frequency Low power amplifier applications.

Features

• Execellent hFE linearity

• Complementary to HSA562

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ...................................................................................... 150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ................................................................................ 500 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 35 V

VCEO Collector to Emitter Voltage ...................................................................................... 30 V

VEBO Emitter to Base Voltage .............................................................................................. 5 V

IC Collector Current ....................................................................................................... 500 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

35

-

-

V

IC=100uA

BVCEO

30

-

-

V

IC=1mA

ICBO

-

-

100

nA

VCB=35V

IEBO

-

-

100

nA

VEB=5V

*VCE(sat)

-

-

0.25

V

IC=100mA, IB=10mA

*VBE(on)

-

-

1

V

VCE=1V, IC=100mA

*hFE1

120

-

240

VCE=1V, IC=100mA

*hFE2

40

-

-

VCE=6V, IC=400mA

fT

-

300

-

MHz

IC=20mA, VCE=6V

Cob

-

7

-

pF

IE=0, VCB=6V, f=1MHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%