Preliminary MSD40P03

P-Channel 30-V (D-S) MOSFET

Publication Order Number: [MSD40P03]

Description

These miniature surface mount MOSFETs utilize a high

cell density trench process to provide low rDS(on) and to

ensure minimal power loss and heat dissipation. Typical

applications are DC-DC converters and power

management in portable and battery-powered products

such as computers, printers, PCMCIA cards, cellular and

cordless telephones.

Features

• Low rDS(on) provides higher efficiency and

• Extends battery life

• Low thermal impedance copper lead frame

• TO-252 saves board space

• Fast switching speed

• High performance trench technology

• RoHS compliant package

Packing & Order Information

Part No./ T：2,500/Reel

Part No./ R：80/Tube , 4,000/Box

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MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Tc=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±25

V

Continuous Drain Current @ TC=25°C

41

A

Pulsed Drain Current

±40

A

Continuous Source Current (Diode Conduction)

-30

A