MSD40P03 datasheet(2/3 Pages) BWTECH

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Preliminary MSD40P03

P-Channel 30-V (D-S) MOSFET

Publication Order Number: [MSD40P03]

Absolute Maximum Ratings (Tc=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Power Dissipation (TC=25°C)

TJ/TSTG

Operating Junction and Storage Temperature

-55 to +175

°C

Note:

1. Surface Mounted on 1” x 1” FR4 Board.

2. D

uty cycle≤1%

Thermal Characteristics (Tc=25°C unless otherwise noted)

Symbol

Parameter

Maximum

Units

Rthjc

Typical thermal resistance

3.0

°C/W

RθJA

Typical thermal resistance

Static Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

VGS

VDS = VGS, ID = 250μA

-1.0

*RDS(ON)

VGS = -10 V , ID = -20.5 A

VGS = -4.5 V , ID = 15.5 A

IDSS

VDS = 24 V , VGS = 0 V

VDS = 24 V , VGS = 0 V , Tj = 55°C

-1

-5

ID(ON)

VDS = -5 V, VGS = -10 V

-41

IGSS

VDS = 0 V , VGS = ±20 V

±100

Dynamic Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

td(on)

VDD= -15 V, ID = -41 A,

RG = 6 Ω , VGEN = -10 V

RL = 15 Ω

td(off)

Gfs

VDS = -15 V , ID = -20.5 A

VDS = -15 V , ID = -21 A,

VGS = -4.5 V

15.3

Qgs

5.2

Qgd

5.8

Dynamic Characteristics

Symbol

Test Conditions

Min

Typ.

Max.

Units

VSD

IS = -41 A, VGS = 0 V

-0.7

*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

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