ADF4110/ADF4111/ADF4112/ADF4113

Data Sheet

Rev. F | Page 6 of 28

ABSOLUTE MAXIMUM RATINGS

Table 3.

Parameter

Rating

−0.3 V to +7 V

−0.3 V to +0.3 V

−0.3 V to +7 V

−0.3 V to +5.5 V

Digital I/O Voltage to GND

Analog I/O Voltage to GND

±320 mV

Operating Temperature Range

Industrial (B Version)

−40°C to +85°C

Storage Temperature Range

−65°C to +150°C

Maximum Junction Temperature

150°C

150.4°C/W

(Paddle Soldered)

122°C/W

(Paddle Not Soldered)

216°C/W

Lead Temperature, Soldering

Vapor Phase (60 sec)

215°C

Infrared (15 sec)

220°C

1

GND = AGND = DGND = 0 V.

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those listed in the operational sections

of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

This device is a high performance RF integrated circuit with an

ESD rating of <2 kV, and it is ESD sensitive. Proper precautions

should be taken for handling and assembly.

TRANSISTOR COUNT

6425 (CMOS) and 303 (Bipolar).

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the

human body and test equipment and can discharge without detection. Although this product features

proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy

electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance

degradation or loss of functionality.