TGS2353

DC – 18 GHz High Power SPDT Switch

Application Circuit

1

5

4

2, 7

3, 6

Vc2

J1

RF In

Vc1

J2

RF Out1

J3

RF Out2

Vc1 can be biased from either bond pad 3 or 6, and the non-biased bond pad can be left open.

Vc2 can be biased from either bond pad 2 or 7, and the non-biased bond pad can be left open.

This switch can be configured as a Single Pole, Single Throw (SPST) by terminating one unused

RF Out port with a 50 Ohm load.

Bias-up Procedure

Bias-down Procedure

Vc1 set to -40 V (On State for Insertion Loss) or 0 V (OFF State

for Isolation)

Turn off RF supply

Vc2 set to 0 V (On State for Insertion Loss) or -40 V (OFF State

for Isolation)

Turn Vc1 to 0V

Apply RF signal to RF Input

Turn Vc2 to 0 V

Function Table

RF Path

State

Vc1

Vc2

RF In to RF Out1 (50 Ohm load to RF Out2)

On-State (Insertion Loss)

0 V

-40 V

Off-State (Isolation)

-40 V

0 V

RF In to RF Out2 (50 Ohm load to RF Out1)

On-State (Insertion Loss)

-40 V

0 V

Off-State (Isolation)

0 V

-40 V

Preliminary Data Sheet: Rev A 06/20/11

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Disclaimer: Subject to change without notice

© 2011 TriQuint Semiconductor, Inc.