| 전자부품 데이터시트 검색엔진 |
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AN1889 데이터시트(PDF) 17 Page - STMicroelectronics |
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AN1889 데이터시트(HTML) 17 Page - STMicroelectronics |
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17 / 33 page ![]() AN1889 ESBT driving circuit 17/33 dynamic saturation, while the capacitor CB plus the resistor RB supply the correct level of base current during all the on state. It is evident that the real advantage of the proposed circuit is the possibility to set VB (affecting the all ON stage) independently from the voltage needed (VB) to get the desired current spike. It is worth noticing that the proposed circuit provides also an energy recovery function, which minimizes the power needed to supply the base. The smaller capacitor stores all charges coming from the base during the storage time, and gives them back to the base during the next turn-on. In a practical driving circuit VB can be set in order to obtain IB1 = -IB3, while VB must provide the right saturation level for the most stressful working condition (that is the highest IC). This condition is characterized by the flat zone where the base current IB = IB2, shown in Figure 6, is practically constant and fixed according to the gain of the transistor used at maximum current. This sort of "fixed voltage driven" method may cause some problems at low load conditions and in general all the times the device works at low current level, in fact in this case the storage time will be longer (over saturation effect), with consequent worse turn-off performance. It is clear that a proportional base biasing could positively impact the device performance at lower current too. In the driving circuit reported in Figure 7 a current transformer associated with the base of the ESBT implements a proportional base biasing and provides two further advantages: firstly designer does not need to get a constant voltage anymore, secondly, the current transformer provides an IB current with the same shape as the collector current. Figure 7. ESBT proportional driving circuit |
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