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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AN3161 데이터시트(PDF) 11 Page - STMicroelectronics |
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AN3161 데이터시트(HTML) 11 Page - STMicroelectronics |
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11 / 14 page  AN3161 The STGW35HF60WD on the test bench Doc ID 17151 Rev 1 11/14 Couple n.2 Couple n.3 If an acceptable value of ∆IC/ITOT = 10% −14% is considered in terms of efficiency, Table 1 shows that three VCE(sat) grouping allows the paralleling of the IGBTs with excellent performance results. Figure 9. ∆IC at TC = 25 °C (board startup) Figure 10. ∆IC at TC = 100 °C Figure 11. ∆IC at TC = 25 °C (board startup) Figure 12. ∆IC at TC = 100 °C Table 1. ∆IC/ITOT % summary Couple 1 ( ∆VCE(sat) = 270 mV) Couple 2 ( ∆VCE(sat) = 250 mV) Couple 3 ( ∆VCE(sat) = 400 mV) ∆IC (25 °C)/ITOT % 20% 21% 25.4% ∆IC (100 °C)/ITOT % 14% 12.9% 11% |
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