AN3161 datasheet(5/14 Pages) STMICROELECTRONICS

부품명	AN3161

상세설명	Using the STGW35HF60WD advanced PT IGBT in parallel

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제조업체	STMICROELECTRONICS [STMicroelectronics]

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5 / 14 page

AN3161

Saturation voltage impact on parallel

Doc ID 17151 Rev 1

5/14

Figure 2.

∆IC (@TJ > 25 °C) of two paralleled IGBT without negative feedback

As a consequence of the negative VCE(sat) coefficient, a higher ∆IC is established at high TJ

(Figure 2). This can cause thermal instability if an accurate negative feedback is not

implemented. NPT and field stop IGBTs have positive VCE(sat) coefficients (the latter

typically starting from low current levels). When working in parallel the one carrying the

higher current increases its temperature, which causes a VCE(sat) increase. This means that,

at the same on-state voltage level, the current does not increase with temperature as in PT

IGBTs; this guarantees an intrinsic balancing mechanism, preventing thermal runaway.

AM06440v1

Tj>25°C,

V GE =15V

0.25

0.5

0.75

1.25

1.5

1.75

2.25

Vce collector emitter voltage (V)

ΔIC

IC1

VCE1=VCE2

ICTOT=IC(T1)+IC(T2)

IC2

AN3161 데이터시트(PDF) 5 Page - STMicroelectronics