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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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AN4213 데이터시트(PDF) 29 Page - STMicroelectronics |
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AN4213 데이터시트(HTML) 29 Page - STMicroelectronics |
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29 / 42 page  DocID023984 Rev 2 29/42 AN4213 Driving optimization The driving circuit, R g = 220 Ω and the diode D, allows the Power MOSFET to not have turn- on too quickly, reducing the discharge of snubber capacitor and consequently guaranteeing negligible switch-on losses and thanks to the diode, it allows the fastest discharge of parasitic capacitance of the Power MOSFET and therefore speeds up the switch-off. A comparison has been performed between two different driving networks in order to find the best solution. The following figures show the waveforms of various conditions. Figure 19. Turn-off detail with Rg=220 Ω, speed off diode and Csn= 47 pF @ 230 VAC Figure 20. Turn-off detail with Rg=220 Ω, speed off diode and Csn=100 pF @ 230 VAC Figure 21. Turn-on detail with Rg= 220 Ω, speed off diode and Csn = 47 pF @ 230 VAC Figure 22. Turn-on detail with Rg= 220 Ω, speed off diode and Csn= 100 pF @ 230 VAC AM17333v1 ss d d V V d d II ss g g V V E Eo offff AM17334v1 ss d d V V d d II ss g g V V ff ff o o E E AM17335v1 ss d d V V d d II ss g g V V n n o o E E AM17336v1 ss d d V V d d II ss g g V V n n o o E E |
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