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AN4407 데이터시트(PDF) 9 Page - STMicroelectronics

부품명 AN4407
상세설명  Advantage of the use of an added driver source lead in discrete Power MOSFETs
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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AN4407 데이터시트(HTML) 9 Page - STMicroelectronics

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AN4407
Description
19
Equation 3
The second method involves estimating the value of Ls using a simulation tool. A HFSS
Electromagnetic simulator tool gave the following results after factoring in the data regarding
the length and section of a wire bonding:
Figure 10. Wires bonding for the HFSS tool
In this case, the simulations return a value of 8.9 nH.
This data is confirmed by the measurements performed on the bench. Figure 11 shows the
computation of the parasitic inductance at around 4 nH because, in this case, the source
path is realized using two wires in parallel.
Figure 11. Wires bonding for the HFSS tool
Given this data, we can proceed with the study of its impact on the system.
Before looking at the influence of the parasitic inductance on the switching commutations,
consider a commutation on the inductive load: the influence of the inductive parasitic effect
is associated with the slope of the current during the switching phase as well as the time of
the commutation.
nH
2
,
9
10
×
200
×
)
1
d
l
4
(ln
l
=
L
9 ≈
GIPG261120131457FSR



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